APL1001P Datasheet Text
D
P-Pack
G S
APL1001P
1000V 18.0A 0.60W HERMETIC PACKAGE
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
N
- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APL1001P UNIT Volts Amps
1000 18 72 ±30 520 4.16 -55 to 150 and Inductive Current Clamped
Volts Watts W/°C °C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 18 0.60 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Ohms µA
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)...